| Type 導電類型 | Semi-Insulated | N-Type | P-Type | NP Type |
| Dopant 摻雜元素 | Fe | S, Sn | Zn | Undoped |
| Growth Method 長晶方式 | VGF | |||
| Diameter 直徑 | 2", 3", 4", 6" | |||
| Orientation 晶向 | (100)±0.5° | |||
| Thickness 厚度 (μm) | 350-675um ±25um | |||
| OF/IF 參考邊 | US EJ | |||
| Carrier Concentration 載流子濃度 | - | (0.8-8)*1018 | (0.8-8)*1018 | (1-10)*1015 |
| Resistivity 電阻率 (ohm-cm) | >0.5*107 | - | - | - |
| Mobility 電子遷移率 (cm2/V.S.) | >1000 | 1000-2500 | 50-100 | 3000-5000 |
| Etch Pitch Density 位錯密度(/cm2) | <5000 | <5000 | <500 | <500 |
| TTV 平整度 [P/P] (μm) | <10 | |||
| TTV 平整度 [P/E] (μm) | <15 | |||
| Warp 翹曲度 (μm) | <15 | |||
| Surface Finished 表面加工 | P/P, P/E, E/E | |||
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